Posted by voxadam 4/16/2025
This is a typo here, right? 1mm is thicker, not thinner, than 750 micrometers. I assume 1µm was meant?
https://www.cadence.com/en_US/home/resources/white-papers/th...
Its the holy grail of having thermal conductivity somewhere between aluminum and copper, while being as electrically insulating as ceramic. You can put the silicon die directly on it.
Problem is that the dust from it is terrifyingly toxic, but in it's finished form it's "safe to handle".
Nobody, presumably :)
Why mess with BeO when there is AlN, with higher thermal conductivity, no supply limitations and no toxicity?
Edit: I've just checked, practically available AlN substrates still seem to lag behind BeO in terms of thermal conductivity.
""" Aluminium nitride (AlN) is a solid nitride of aluminium. It has a high thermal conductivity of up to 321 W/(m·K)[5] and is an electrical insulator. Its wurtzite phase (w-AlN) has a band gap of ~6 eV at room temperature and has a potential application in optoelectronics operating at deep ultraviolet frequencies.
...
Manufacture
AlN is synthesized by the carbothermal reduction of aluminium oxide in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium.[22] The use of sintering aids, such as Y2O3 or CaO, and hot pressing is required to produce a dense technical-grade material.[citation needed] Applications
Epitaxially grown thin film crystalline aluminium nitride is used for surface acoustic wave sensors (SAWs) deposited on silicon wafers because of AlN's piezoelectric properties. Recent advancements in material science have permitted the deposition of piezoelectric AlN films on polymeric substrates, thus enabling the development of flexible SAW devices.[23] One application is an RF filter, widely used in mobile phones,[24] which is called a thin-film bulk acoustic resonator (FBAR). This is a MEMS device that uses aluminium nitride sandwiched between two metal layers.[25] """
Speculation: it's present use suggests that at commercially viable quantities it might be challenging to use as a thermal interface compound. I've also never previously considered the capacitive properties of packaging components and realize of course that's required. Use of Al O as a heat conductor is so far outside of my expertise...
Could a materials expert elaborate how viable / expensive this compound is for the rest of us?
Because aluminum nitride is not as good as beryllia, packages with beryllia have survived for some special applications, like military, aerospace or transistors for high-power radio transmitters.
Those packages are not dangerous, unless someone attempts to grind them, but their high price (caused by the difficult manufacturing techniques required to avoid health risks, and also by the rarity of beryllium) discourages their use in any other domains.
Doesn't that mean it would be problematic for electronics recycling?
I can't help but wonder, where exactly is that heat supposed to go on the underside of the chip? Modern CPUs practical float atop a bed of nails.
A toroidal shape would allow more interconnects to be interspaced throughout the design as well as more heat-transfer points alongside the data transfer interconnects.
Something like chiplet design where each logical section is a complete core or even an SOC with a robust interconnect to the next and previous section.
If that were feasible, you could build it onto a hollow tube structure so that heat could be piped out from all sides once you sandwich the chip in a wraparound cooler.
I guess the idea is more scifi than anything, though. I doubt anyone other than ARM or RISC-V would ever even consider the idea until some other competitor proves the value.
Rip out all the special purpose bits that make it non-uniform, and thus hard to route.
Rip out all of the long lines and switching fabric that optimizes for delays, and replace it all with only short lines to the neighboring cells. This greatly reduces switching energy.
Also have the data needed for every compute step already loaded into the cells, eliminating the memory/compute bottleneck.
Then add a latch on every cell, so that you can eliminate race conditions, and the need to worry about timing down to the picosecond.
This results in a uniform grid of Look Up Tables (LUTS) that get clocked in 2 phases, like the colors of the chessboard. Each cell thus has stable inputs, as they all come from the other phase, which is latched.
I call it BitGrid.
I'd give it a 50/50 chance of working out in the real world. If it does, it'll mean cheap PetaFlops for everyone.
But neural networks are non-Von Neumann, and we 'program' them using backprop. This can also be applied to cellular automata.
Yes, gas centrifuge appears to be a leading method.
'The purification starts with “simple” isotopic purification of silicon. The major breakthrough was converting this Si to silane (SiH4), which is then further refined to remove other impurities. The ultra-pure silane can then be fed into a standard epitaxy machine for deposition onto a 300-mm wafer.'
https://www.eejournal.com/article/silicon-purification-for-q...
A rocket and a sandblaster at the same time.
"Chemistry of the Main Group Elements - 7.10: Semiconductor Grade Silicon"
https://chem.libretexts.org/Bookshelves/Inorganic_Chemistry/...
https://spectrum.ieee.org/silicon-quantum-computing-purified...
Of course cost would have to be acceptable.
Isotopically pure diamond, now there's something to look at.
https://en.wikipedia.org/wiki/Isotopically_pure_diamond
"The 12C isotopically pure, (or in practice 15-fold enrichment of isotopic number, 12 over 13 for carbon) diamond gives a 50% higher thermal conductivity than the already high value of 900-2000 W/(m·K) for a normal diamond, which contains the natural isotopic mixture of 98.9% 12C and 1.1% 13C. This is useful for heat sinks for the semiconductor industry."
I wonder if we can actually use those heat for something useful.